VS-HFA50PA60CHN3 www.vishay.com vishay semiconductors revision: 15-jul-15 1 document number: 94678 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 2 x 25 a features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? aec-q101 qualified, meets jesd 201 class 1a whisker test ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description VS-HFA50PA60CHN3 is a state of the art center tap ultrafast recovery diode. empl oying the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. with basi c ratings of 600 v and 25 a per leg continuous current, the VS-HFA50PA60CHN3 is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to snap-off during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snubbing, component count and heatsink sizes. the hexfred VS-HFA50PA60CHN3 is ideally suited for applications in power supp lies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. product summary package to-247ac i f(av) 2 x 25 a v r 600 v v f at i f 1.3 v t rr typ. 23 ns t j max. 150 c diode variation single die to-247ac base common cathode common cathode 2 2 13 anode 1 anode 2 absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 600 v maximum continuous forward current per leg i f t c = 100 c 25 a per device 50 single pulse forward current i fsm 225 maximum repetitive forward current i frm 100 maximum power dissipation p d t c = 25 c 150 w t c = 100 c 60 operating junction and storage temperature range t j , t stg -55 to +150 c
VS-HFA50PA60CHN3 www.vishay.com vishay semiconductors revision: 15-jul-15 2 document number: 94678 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications per leg (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 600 - - v maximum forward voltage v fm i f = 25 a see fig. 1 -1.31.7 i f = 50 a - 1.5 2.0 i f = 25 a, t j = 125 c - 1.3 1.7 maximum reverse leakage current i rm v r = v r rated see fig. 2 -1.520 a t j = 125 c, v r = 0.8 x v r rated - 600 2000 junction capacitance c t v r = 200 v see fig. 3 - 55 100 pf series inductance l s measured lead to lead 5 mm from package body - 12 - nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time see fig. 5, 10 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 23 - ns t rr1 t j = 25 c i f = 25 a di f /dt = 200 a/s v r = 200 v -50- t rr2 t j = 125 c - 105 - peak recovery current see fig. 6 i rrm1 t j = 25 c - 4.5 - a i rrm2 t j = 125 c - 8.0 - reverse recovery charge see fig. 7 q rr1 t j = 25 c - 112 - nc q rr2 t j = 125 c - 420 - peak rate of fa ll of recovery current during t b see fig. 8 di (rec)m /dt1 t j = 25 c - 250 - a/s di (rec)m /dt2 t j = 125 c - 160 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c junction to case, single leg conducting r thjc - - 0.83 k/w junction to case, both legs conducting - - 0.42 thermal resistance, junction to ambient r thja typical socket mount - - 40 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.25 - weight -6.0- g -0.21- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-247ac hfa50pa60ch
VS-HFA50PA60CHN3 www.vishay.com vishay semiconductors revision: 15-jul-15 3 document number: 94678 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop vs. instantaneous forward current (per leg) fig. 2 - typical reverse current vs. reverse voltage (per leg) fig. 3 - typical junction capacitance vs. reverse voltage (per leg) fig. 4 - maximum thermal impedance z thjc characteristics (per leg) i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.6 1.0 1.4 1.8 2.2 2.6 1 100 10 t j = 150 c t j = 125 c t j = 25 c i r - reverse current (a) v r - reverse voltage (v) 0 200 400 600 0.01 0.1 1 10 100 1000 10 000 t j = 125 c t j = 150 c t j = 25 c c t - junction capacitance (pf) v r - reverse voltage (v) 1 10 100 1000 10 1000 100 t j = 25 c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response single pulse (thermal resistance) p dm t 2 t 1 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
VS-HFA50PA60CHN3 www.vishay.com vishay semiconductors revision: 15-jul-15 4 document number: 94678 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse recovery time vs. di f /dt (per leg) fig. 6 - typical recovery current vs. di f /dt (per leg) fig. 7 - typical stored charge vs. di f /dt (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt (per leg) fig. 9 - reverse recovery waveform and definitions t rr (ns) di f /dt (a/s) 100 1000 0 140 120 20 60 100 40 80 v r = 200 v t j = 125 c t j = 25 c i f = 50 a i f = 25 a i f = 10 a i rr (a) di f /dt (a/s) 100 1000 0 30 20 25 5 10 15 i f = 50 a i f = 25 a i f = 10 a v r = 200 v t j = 125 c t j = 25 c q rr (nc) di f /dt (a/s) 100 1000 0 1400 1000 200 400 600 1200 800 i f = 50 a i f = 25 a i f = 10 a v r = 200 v t j = 125 c t j = 25 c di (rec)m /dt (a/s) di f /dt (a/s) 100 1000 100 10 000 1000 i f = 50 a i f = 25 a i f = 10 a v r = 200 v t j = 125 c t j = 25 c q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-HFA50PA60CHN3 www.vishay.com vishay semiconductors revision: 15-jul-15 5 document number: 94678 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-HFA50PA60CHN3 25 500 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95223 part marking information to-247ac-n3 www.vishay.com/doc?95007 1 - vishay semiconductors product 2 - hexfred ? family 3 - electron irradiated 4 - current rating (50 = 50 a) 5 - pa = to-247ac device code 5 1 3 2 4 6 7 8 9 hf vs- a 50 pa 60 c h n3 6 7 - circuit configuration c = common cathode 8 - voltage rating: (60 = 600 v) - h = aec-q101 qualified 9 - environmental digit: n3 = halogen-free, rohs-compliant, and totally lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 07-apr-15 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-247 dimensions in millimeters and inches notes (1) dimensioning and tolerancing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish unc ontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jedec ? outline to-247 with exception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.34 0.065 0.092 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 ? p1 - 6.98 - 0.275 c1 0.38 0.84 0.015 0.033 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 0.178 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) p (datum b) p1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) plating
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